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ISP 752 T
Smart Power High-Side-Switch for Industrial Applications
Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown with restart * ESD - Protection Product Summary Overvoltage protection Operating voltage On-state resistance Nominal load current Operating temperature Vbb(AZ) Vbb(on) RON IL(nom) Ta 62 6 ... 52 200 1.3 -30...+85 V V m A C
* Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection with external resistor * CMOS compatible input * Loss of GND and loss of Vbb protection * Very low standby current
PG-DSO-8
Application
* All types of resistive, inductive and capacitive loads * C compatible power switch for 12 V, 24 V and 42 V DC industrial applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
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2006-03-09
ISP 752 T
Block Diagram
+ V bb
Voltage source V Logic
Overvoltage protection
Current limit
Gate protection
Charge pump Level shifter Rectifier
IN
Limit for unclamped ind. loads
OUT
Temperature sensor Load
ESD
Logic
GND
miniPROFET
Signal GND
Load GND
Pin 1 2 3 4 5 6 7 8
Symbol GND IN OUT NC Vbb Vbb Vbb Vbb
Function Logic ground Input, activates the power switch in case of logic high signal Output to the load not connected Positive power supply voltage Positive power supply voltage Positive power supply voltage Positive power supply voltage
Pin configuration
Top view
GND IN OUT NC 1* 2 3 4 8 7 6 5 Vbb Vbb Vbb Vbb
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2006-03-09
ISP 752 T Maximum Ratings at Tj = 25 C, unless otherwise specified Parameter Supply voltage Supply voltage for full short circuit protection Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Junction temperature Operating temperature Storage temperature Power dissipation 1) Inductive load switch-off energy dissipation 1)2) single pulse, (see page 8) Tj =150 C, IL = 1 A Load dump protection 2) VLoadDump3)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 13.5 RL = 27 Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) Rth(JA) 95 70 83 K/W 1 5 73.5 83.5 kV VLoaddump V Symbol Vbb Vbb(SC) VIN IL I IN Tj Ta T stg Ptot EAS Value 52 50 -10 ... +16 self limited 5 150 -30...+85 -40 ... +105 1.5 125 W mJ A mA C Unit V
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.
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2006-03-09
ISP 752 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150C, V bb = 12..42V, unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance T j = 25 C, I L = 1 A, V bb = 9...52 V T j = 150 C Nominal load current; Device on PCB 1) T C = 85 C, T j 150 C Turn-on time RL = 47 Turn-off time RL = 47 Slew rate on Slew rate off 10 to 30% V OUT, 70 to 40% V OUT, dV/dton -dV/dtoff 0.7 0.9 2 2 V/s RL = 47 , V bb = 13.5 V RL = 47 , V bb = 13.5 V Operating Parameters Operating voltage Undervoltage shutdown of charge pump Tj = -40...+85 C Tj = 150 C Undervoltage restart of charge pump Standby current Tj = -40...+85 C, VIN = low Tj = +150 C2) , VIN = low Leakage output current (included in Ibb(off)) VIN = low Operating current VIN = high
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2higher current due temperature sensor
Symbol min. RON IL(nom) ton toff 1.3 -
Values typ. max.
Unit
m 150 270 1.7 80 80 200 380 180 200 A s
to 90% V OUT to 10% V OUT
Vbb(on) Vbb(under)
6 -
4 0.8
52 4 5.5 5.5
V
Vbb(u cp) Ibb(off)
-
A 15 18 5 2 mA
IL(off) IGND
-
Page 4
2006-03-09
ISP 752 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150C, Vbb = 12..42V, unless otherwise specified Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) Tj = -40 C, Vbb = 20 V, tm = 150 s Tj = 25 C Tj = 150 C Tj = -40...+150 C, Vbb > 40 V , ( see page 11 ) Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Vbb < 40 V Vbb > 40 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery 4) Drain-source diode voltage (VOUT > Vbb) Tj = 150 C -Vbb -VON 600 52 V mV T jt Tjt 150 10 C K Vbb(AZ) 62 VON(CL) I L(SCr) 59 6 4.5 63 V I L(SCp) 4 6.5 5 2) 9 A Symbol min. Values typ. max. Unit
1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2not subject to production test, specified by design 3 see also VON(CL) in circuit diagram on page 7 4Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3).
Page 5
2006-03-09
ISP 752 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150C, Vbb = 12..42V, unless otherwise specified Input Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current VIN = 0.7 V On state input current VIN = 5 V Input resistance (see page 7) RI 2 3.5 5 k I IN(on) 3 25 VIN(T+) VIN(T-) V IN(T) I IN(off) 0.8 1 0.4 2.2 25 A V Symbol min. Values typ. max. Unit
Page 6
2006-03-09
ISP 752 T Terms
Ibb
V Z V ON
Inductive and overvoltage output clamp
+ V bb
Vbb I IN IN V V bb PROFET OUT
OUT GND
IL
VON
IN R
GND IGND GND VOUT
VON clamped to 59V min.
Input circuit (ESD protection)
R IN I
Overvoltage protection of logic part
+ V bb V
Z2
ESD- ZD I GND
I
I
IN
RI L o gic
V
Z1
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
GND
R GN D
S ignal GND
Reverse battery protection
- V bb
VZ1 =6.1V typ., VZ2 =Vbb(AZ) =62V min., RI=3.5 k typ., RGND=150
Logic
IN
RI OUT
Power Inverse Diode
Internal output pull down
V bb
GND R GND
Signal GND Power GND
RL
V
OUT
RGND=150, RI=3.5k typ., Temperature protection is not active during inverse current
S ign al G N D R O
RO = 200 k typ.
Page 7
2006-03-09
ISP 752 T GND disconnect Vbb disconnect with charged inductive load
Vbb IN PROFET OUT
Vbb high IN PROFET OUT
GND V bb V IN V GND
GND
V
bb
GND disconnect with GND pull up
Vbb IN PROFET OUT
Inductive Load switch-off energy dissipation
E bb E AS Vbb E Load
GND
V bb
V IN
V GND
=
IN
PROFET
OUT
GND
ZL
{
R L
L
EL
ER
Energy stored in load inductance: EL = 1/2 * L * IL2 While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:
E AS =
IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL
Page 8
2006-03-09
ISP 752 T Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T
10
2
Typ. transient thermal impedance Z thJC=f(t p) @ min. footprint Parameter: D=tp/T
10 2
K/W
D=0.5 D=0.2
K/W
D=0.5 D=0.2
10 1
D=0.1
10 1
D=0.1 D=0.05 D=0.02
D=0.02
Z thJA
ZthJA
D=0.05
10 0
D=0.01
10 0
D=0.01
10 -1
D=0
10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
s
10
4
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
tp
s
10
4
tp
Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; Vin = high
300
Typ. on-state resistance RON = f(V bb); IL = 1 A ; Vin = high
400
m
m
150C
300
RON
200
RON
250
150
200
25C -40C
150 100 100 50 50
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 0
5
10
15
20
25
30
35
40
V Vbb
50
Page 9
2006-03-09
ISP 752 T Typ. turn on time ton = f(Tj ); RL = 47
160
Typ. turn off time toff = f(Tj); RL = 47
160
s
9V
s
120
120
t on
toff
100
13.5V
100
9...42V
80
42V
80
60
60
40
40
20
20
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
Typ. slew rate on dV/dton = f(T j) ; RL = 47
2
Typ. slew rate off dV/dtoff = f(Tj); R L = 47
3.5
V/s
1.6
V/s
dV dton
-dV dtoff
42V
1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20
13.5V 9V
2.5
2
1.5
42V
1
0.5
13.5V 9V
0
20
40
60
80 100 120
C Tj
160
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
Page 10
2006-03-09
ISP 752 T Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low
10
Typ. leakage current I L(off) = f(Tj) ; Vbb = 42V ; VIN = low
2.5
A
A
I bb(off)
6
I L(off)
0 20 40 60 80 100 120 160
1.5
4
1
2
0.5
0 -40 -20
C Tj
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
Typ. initial peak short circuit current limit IL(SCp) = f(Vbb)
10
Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V
4
ms
A
-40C
3
IL(SCp)
25C
toff(SC)
6
150C
2.5
2 4
1.5
1 2 0.5
0 0
10
20
30
40
V Vbb
60
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
Page 11
2006-03-09
ISP 752 T Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high VINlow 0,7V; VINhigh = 5V
12 50
Typ. input current I IN = f(VIN); V bb = 13.5V
A
A
-40...25C 150C
IIN
IIN
on off
8
30
6 20
4
2
10
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 0
1
2
3
4
5
6
V VIN
8
Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V
2
Typ. input threshold voltage VIN(th) = f(V bb) ; Tj = 25C
2
V
on
V
on
1.6
1.6
V IN(th)
VIN(th)
1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20
off
1.4 1.2 1 0.8 0.6 0.4 0.2
off
0
20
40
60
80 100 120
C Tj
160
0 0
10
20
30
V Vbb
50
Page 12
2006-03-09
ISP 752 T Maximum allowable load inductance for a single switch off L = f(IL); Tjstart =150C, RL=0
2000
Maximum allowable inductive switch-off energy, single pulse EAS = f(I L); T jstart = 150C, Vbb = 13,5V
1800
mH
1600 1400 1200 1000
mJ
1400
L
EAS
42V 13,5V
1200 1000 800
800 600 400 200 0 0 600 400 200 0 0
0.25
0.5
0.75
1
A IL
1.5
0.25
0.5
0.75
1
A IL
1.5
Page 13
2006-03-09
ISP 752 T
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching a lamp,
IN
IN
V bb
OUT
V
I
OUT
L
t
t
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
IN
Figure 2c: Switching an inductive load
IN
V OUT
90% t on d V /d to n 10% t d V /d to f f
V
OUT
o ff
IL
I
L
t
t
Page 14
2006-03-09
ISP 752 T
Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
IN
Figure 5: Undervoltage restart of charge pump
Vo n
t I
L
I
L(SCp)
V b b( u c p )
I L(SCr)
V b ( u n d er ) b
tm t off(SC) t
Vbb
Heating up of the chip may require several milliseconds, depending on external conditions.
Figure 4: Overtemperature: Reset if Tj < Tjt
IN
V
OUT
T
J
t
Page 15
2006-03-09
ISP 752 T
Package and ordering code
all dimensions in mm
Package: PG-DSO-8
Ordering code: SP000211730
Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. nominal load current IL(nom) and thermal resistance R thja
Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 16
2006-03-09

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